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| Specifications |  |
|---|---|
| Shop prices for the exact edition | Some source records differ or are incomplete. Unconfirmed costs have not been merged into an artificial total. |
| Brand | Samsung |
| Manufacturer code | MZ-VAP2T0BW |
| EAN | 8806095811710 |
| DRAM cache | 2 GB |
| Controller | Samsung in-house |
| Interface | PCIe 5.0 ×4 / NVMe 2.0 |
| Factory heatsink | Unknown |
| NAND type | TLC V-NAND |
| Limited warranty, up to | 5 years |
| Random read, up to | 1850000 IOPS |
| Drive height, up to | 2.38 mm |
| Capacity | 2000 GB |
| Form factor | M.2 2280 |
| Sequential read, up to | 14700 MB/s |
| Sequential write, up to | 13400 MB/s |
| Endurance | 1200 TBW |
| Supplied colour | Unknown |
| Cache arrangement | LPDDR4X |
Unknown is not zero. Manufacturer and supplied shop facts are not independent laboratory measurements. Share this comparison using its browser address.
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A specification match, not a test score. The specification match does not measure sustained write speed, heat or reliability.